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MPD
描述
MPD 探測器芯片采用InGaAs/InP材料，P/N電極異面結構，210×210μm方形光敏面設計。該系列芯片具有920nm~1650nm寬響應波長范圍，高響應度，低暗電流，高可靠性等特性，主要應用在正面進光的激光器背光監控場景。